Description
Third-generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance, and cost-effectiveness.
The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220AB devices. The TO-247AC is similar but superior to the earlier TO-218 package because of its isolated mounting hole. It also provides greater creepage distance between pins to meet the requirements of most safety specifications.
Features
- Dynamic dV/dt rated
- Repetitive avalanche rated
- Isolated central mounting hole
- Fast switching
- Ease of paralleling
- Simple drive requirements
Specifications
| Attribute | Value |
| Drain Source Voltage (Vdss) | 400V |
| Continuous Drain Current (Id) | 23A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 200mΩ@14A,10V |
| Power Dissipation (Pd) | 280W |
| Gate Threshold Voltage (Vgs(th)@Id) | 4V@250uA |
| Type | null |
| Input Capacitance (Ciss@Vds) | 4500pF@25V |
| Total Gate Charge (Qg@Vgs) | 210nC@10V |
| Operating Temperature | -55℃~+150℃@(Tj) |
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