Bc 558

The BC558 is a PNP epitaxial-silicon bipolar junction transistor designed for general-purpose switching and amplifier applications. It supports up to –30 V across the collector‑emitter junction and a continuous collector current of –100 mA, making it well suited for low‑to‑medium power audio and signal‑processing circuits.

Features
PNP Epitaxial Silicon Construction
Collector–Emitter Voltage (VCEO) = –30 V
Collector Current (IC) = –100 mA
Power Dissipation (PC) = 500 mW
Low Saturation Voltages for Efficient Switching
DC Current Gain (hFE) from 110 to 800
Bandwidth (fT) = 150 MHz
Complement to BC546–BC550 (NPN Series)
Specifications
Parameter Symbol Value Unit Notes
Collector–Emitter Voltage VCEO –30 V Absolute Max
Collector–Base Voltage VCBO –30 V Absolute Max
Emitter–Base Voltage VEBO –5 V Absolute Max
Collector Current (DC) IC –100 mA
Collector Power Dissipation PC 500 mW TA = 25 °C
Junction Temperature TJ 150 °C Max Operating Temp
Storage Temperature TSTG –65 to +150 °C
DC Current Gain hFE 110 to 800 — VCE=–5 V, IC=–2 mA
Collector–Emitter Saturation Voltage VCE(sat) –90 to –300 mV IC=–10 mA
Base–Emitter On Voltage VBE(on) –600 to –750 mV IC=–2 mA
Transition Frequency fT 150 MHz VCE=–5 V, IC=–10 mA
Output Capacitance Cob 6 pF VCB=–10 V
Noise Figure NF 2 to 10 dB VCE=–5 V, IC=–200 µA